Morphology and growth process of thermally induced oxide precipitates in Czochralski silicon
- 1 November 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (9) , 5437-5444
- https://doi.org/10.1063/1.354254
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- An Atomic Model of Electron-Irradiation-Induced Defects on {113} in SiJapanese Journal of Applied Physics, 1991
- A study of oxygen precipitation in silicon using high-resolution transmission electron microscopy, small-angle neutron scattering and infrared absorptionPhilosophical Magazine Part B, 1989
- Thermodynamic and kinetic considerations on the equilibrium shape for thermally induced microdefects in Czochralski siliconJournal of Applied Physics, 1986
- Growth law for disk precipitates, and oxygen precipitation in siliconApplied Physics Letters, 1986
- Investigation of the oxygen-related lattice defects in Czochralski silicon by means of electron microscopy techniquesPhysica Status Solidi (a), 1984
- Structure of Thermally-Induced Microdefects in Czochralski SiliconMRS Proceedings, 1983
- Thermally induced microdefects in Czochralski-grown silicon crystalsJournal of Crystal Growth, 1982
- Diffusion-limited growth of oxide precipitates in czochralski silisonJournal of Crystal Growth, 1980
- Homogeneous nucleation of oxide precipitates in Czochralski-grown siliconApplied Physics Letters, 1980
- Surface- and inner-microdefects in annealed silicon wafer containing oxygenJournal of Applied Physics, 1980