Investigations on InP:Ti grown by metalorganic vapor phase epitaxy
- 9 March 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (10) , 1259-1261
- https://doi.org/10.1063/1.107423
Abstract
Ti doped InP layers were grown by atmospheric pressure metalorganic vapor phase epitaxy. Using the commercially available tetrakis(diethylamino)‐titanium, we obtained total Ti doping levels up to 1020 cm−3. Photocurrent measurements and deep level transient spectroscopy enabled us to investigate the internal 3d‐transitions of Ti3+ (2E→2T2: 546.5 and 550 meV) and the Ti3+/Ti4+ transition (0.62 eV) confirming substitutional incorporation of Ti in InP. The concentration of electrically active Ti is limited to a value of 2.5×1017 cm−3, as determined by InP:Ti:Zn co‐doping experiments. Secondary ion mass spectroscopy demonstrated, that oxygen incorporation is one reason for incomplete electrical activity, especially in the lower Ti doping region.Keywords
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