Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3-dimethylaminopropyl) indium as a new indium source

Publisher Website
Google Scholar
Abstract
Dimethyl (3‐dimethylaminopropyl) indium was synthesized and used for the first time as an indium source for the growth of InP layers by metalorganic vapor phase epitaxy at atmospheric pressure. This compound is liquid at room temperature with a vapor pressure of 30–40 Pa at 30 °C, which enables its use at low source temperatures. The layers were grown at a bubbler temperature of 30 °C. The growth temperature was varied between 580 and 660 °C. Hall measurements revealed good electrical data with carrier mobilities up to 49 900 cm2 /V s at 77 K. Temperature‐dependent photoluminescence experiments confirmed these results and indicated that zinc was the main residual acceptor impurity.