The effect of post-implantation annealing temperature on the deep states present in SIMOX MOSFET’s as observed using enhancement mode current DLTS
- 1 May 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (5) , 449-452
- https://doi.org/10.1007/bf02658005
Abstract
No abstract availableKeywords
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