Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration
- 16 March 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (11) , 1351-1353
- https://doi.org/10.1063/1.107314
Abstract
No abstract availableKeywords
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