Thin-film analysis using Rutherford scattering
- 21 March 1974
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 7 (5) , 653-662
- https://doi.org/10.1088/0022-3727/7/5/301
Abstract
The technique of Rutherford scattering of MeV α-particles has been used to study the stoichiometry and impurity content of a number of thin-film structures which exhibit electroforming and switching effects. The materials studied, SiOx, Cu2O, CaF2, and CdS, enable the advantages and limitations of the technique to be studied.Keywords
This publication has 11 references indexed in Scilit:
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973
- Proton microbeams, their production and useJournal of Radioanalytical and Nuclear Chemistry, 1972
- An investigation of the stoichiometry and impurity content of thin silicon oxide films using Rutherford scattering of MeV α-particlesPhysica Status Solidi (a), 1972
- Comments on “electron emission from metal-CdS-insulator-metal and metal-insulator-CdS-metal thin film devices”Thin Solid Films, 1972
- Growth Kinetics Observed in the Formation of Metal Silicides on SiliconApplied Physics Letters, 1972
- Electron emission from metal-CdS-insulator-metal and metal-insulator-CdS-metal thin film devicesThin Solid Films, 1972
- Analysis of evaporated silicon oxide films by means of (d, p) nuclear reactions and infrared spectrophotometryPhysica Status Solidi (a), 1971
- Electrical phenomena in amorphous oxide filmsReports on Progress in Physics, 1970
- Investigation of ion-implanted crystals by means of directional effects in charged particle reaction yieldsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1969
- The Elastic Scattering and Capture of Protons by OxygenPhysical Review B, 1951