Transmission electron microscopic observation of InGaP crystals grown on (001)GaAs substrates by metalorganic chemical vapor deposition
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 418-425
- https://doi.org/10.1016/0022-0248(88)90562-3
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Ordering in GaAs1−xSbx grown by molecular beam epitaxyApplied Physics Letters, 1987
- Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1987
- Atomic ordering in As and alloy semiconductorsPhysical Review Letters, 1987
- Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energyApplied Physics Letters, 1987
- Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxyApplied Physics Letters, 1986
- On elastic relaxation and long wavelength microstructures in spinodally decomposed InxGa1−x.AsyP1−yepitaxial layersPhilosophical Magazine A, 1985
- Atomic structure and ordering in semiconductor alloysPhysical Review B, 1985
- Long-Range Order inPhysical Review Letters, 1985
- Composition-Modulated Structures in InGaAsP and InGaP Liquid Phase Epitaxial Layers Grown on (001) GaAs SubstratesJapanese Journal of Applied Physics, 1984
- Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−y layers lattice matched to InP substratesApplied Physics Letters, 1982