Composition-Modulated Structures in InGaAsP and InGaP Liquid Phase Epitaxial Layers Grown on (001) GaAs Substrates
- 1 April 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (4A) , L241
- https://doi.org/10.1143/jjap.23.l241
Abstract
InGaAsP and InGaP epitaxial layers lattice-matched to (001)-oriented GaAs substrates successfully grown by liquid phase epitaxy have been investigated by transmission electron microscopy, scanning transmission electron microscopy and energy dispersive X-ray spectroscopy. In both layers, periodic diffraction contrasts (modulated structures), are observed in two equivalent directions of the and the . Compositional variation has also been observed along these structures. These are associated with spinodal decomposition of the crystal during growth.Keywords
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