LPE Growth of In1-xGaxP1-zAsz (z ≦0.01) on (1 0 0) GaAs Substrates and Its Lattice Constants and Photoluminescence
- 1 February 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (2) , 321
- https://doi.org/10.1143/jjap.20.321
Abstract
The LPE Growth of In1-x Ga x P1-z As z (z ≦0.01) on (1 0 0) GaAs substrates is described with stress on the relation between the compositions of source melts and the quality of grown crystals. The melt in equilibrium with In1-x Ga x P0.99As0.01 lattice-matched to GaAs at 785°C is found to consist of 0.87 at.% of Ga, 2.66 at.% of P, 0.05 at.% of As and the rest In. Lattice constants strained in the direction of growth of the layers grown from melts supersaturated by 4°C were pinned near to a value 0.3% larger than that of GaAs substrates. However, the pinning was not observed for wafers grown from melts supersaturated by more than 8.6°C. The photoluminescence of the wafers is also reported.Keywords
This publication has 14 references indexed in Scilit:
- Lattice-Matched LPE Growth of In1-xGaxP1-yAsyLayers on (100) GaAs SubstratesJapanese Journal of Applied Physics, 1980
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with (100) Substrate in the Range of 1.2–1.5 µmJapanese Journal of Applied Physics, 1978
- Continuous operation of visible-spectrum in1-xGaxP1-zAszlaser diodes (6280 Å, 77 K)IEEE Journal of Quantum Electronics, 1978
- Pulsed room-temperature operation of In1−xGaxP1−zAsz double heterojunction lasers at high energy (6470 Å, 1.916 eV)Applied Physics Letters, 1976
- GaxIn1−xP−GayAl1−yAs heterojunction close−confinement injection laserApplied Physics Letters, 1975
- Successful liquid phase epitaxial growth and optically pumped laser operation of In0.5Ga0.5P–Ga0.4Al0.6As double-heterostructure materialApplied Physics Letters, 1974
- Liquid Phase Epitaxial Growth of In1-xGaxPJapanese Journal of Applied Physics, 1973
- Liquid phase epitaxial growth of GaxIn1−xPJournal of Electronic Materials, 1972
- Calculation of the Ga-In-P Ternary Phase Diagram Using the Quasi-Chemical Equilibrium ModelJournal of the Electrochemical Society, 1970