GaxIn1−xP−GayAl1−yAs heterojunction close−confinement injection laser
- 1 April 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (7) , 394-395
- https://doi.org/10.1063/1.88190
Abstract
Heterojunction laser diodes with GaxIn1−xP active layer have been fabricated from GaAs−Ga0.51In0.49P−Ga0.32 Al0.68As−GaAs heterostructures made by liquid phase epitaxy from Ga−rich and In−rich solutions. Stripe−geometry lasers have been operated at 77 K with threshold current densities as low as 2500 A/cm2 with an emission wavelength of λ=638 nm.Keywords
This publication has 6 references indexed in Scilit:
- Liquid phase epitaxial (LPE) grown junction In1−xGaxP (x∼0.63) laser of wavelength λ∼5900 Å (2.10 eV, 77°K)Applied Physics Letters, 1974
- Successful liquid phase epitaxial growth and optically pumped laser operation of In0.5Ga0.5P–Ga0.4Al0.6As double-heterostructure materialApplied Physics Letters, 1974
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972
- Orange Laser Emission and Bright Electroluminescence from In1−xGaxP Vapor-Grown p-n JunctionsApplied Physics Letters, 1972
- Improved technique for the preparation of Ga
x
Al
1−
x
As electroluminescent diodesElectronics Letters, 1972
- In1−xGaxP p-n Junction LasersApplied Physics Letters, 1971