Influence of low-temperature interlayers on strain and defect density of epitaxial GaN layers

This publication has 8 references indexed in Scilit:

• Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking
  Applied Physics Letters, 2002
• High-Efficiency GaN/AlxGa1?xN Multi-Quantum-Well Light Emitter Grown on Low-Dislocation Density AlxGa1?xN
  Physica Status Solidi (a), 2001
• Reduction of threading dislocation density in GaN using an intermediate temperature interlayer
  Applied Physics Letters, 2000
• Dislocation reduction in GaN films through selective island growth of InGaN
  Applied Physics Letters, 2000
• Residual strain dependence of optical characteristics in GaN layers grown on (0001) sapphire substrates
  Applied Physics Letters, 1999
• A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy
  Applied Physics Letters, 1998
• Pit formation in GaInN quantum wells
  Applied Physics Letters, 1998
• Formation Mechanism of Nanotubes in GaN
  Physical Review Letters, 1997