Thermodynamic Calculations for the Chemical Vapor Deposition of Silicon Nitride
- 1 August 1983
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 66 (8) , 551-558
- https://doi.org/10.1111/j.1151-2916.1983.tb10090.x
Abstract
No abstract availableKeywords
This publication has 51 references indexed in Scilit:
- Low Pressure Deposition of Silicon Nitride by SiCl4 and NH 3 ReactionJournal of the Electrochemical Society, 1981
- Internal Phase Changes in Dense Si3N4 Associated with High‐Temperature OxidationJournal of the American Ceramic Society, 1981
- Selective Studies of Chemical Vapor‐Deposited Aluminum Nitride‐Silicon Nitride Mixture FilmsJournal of the Electrochemical Society, 1978
- Preparation of Nitrides by Active Nitrogen: II .Journal of the Electrochemical Society, 1977
- Chemical vapour-deposited silicon nitrideJournal of Materials Science, 1976
- Chemical vapour-deposited silicon nitrideJournal of Materials Science, 1976
- Chemical vapor deposition in the systems silicon-carbon and silicon-carbon-nitrogenJournal of the Less Common Metals, 1974
- Synthesis, Characterization, and Consolidation of Si3N4 Obtained from Ammonolysis of SiCl4Journal of the American Ceramic Society, 1973
- Control of the Deposition of Silicon Nitride Layers by 2537Å RadiationJournal of the Electrochemical Society, 1972
- Some Properties of Vapor Deposited Silicon Nitride Films Obtained by the Reaction of SiBr[sub 4] and NH[sub 3]Journal of the Electrochemical Society, 1969