Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPE
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Residual strain in GaN epilayers grown on sapphire and (6H)SiC substratesApplied Physics Letters, 1996
- Violet and Near-UV Light Emission from GaN/Al 0.08Ga 0.92N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1995
- GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layersApplied Physics Letters, 1995
- Microstructure of GaN epitaxy on SiC using AlN buffer layersApplied Physics Letters, 1995
- AlGaN pn junctionsApplied Physics Letters, 1995
- Growth and Doping of AlxGa1−xN Deposited Directly on α(6H)-SiC(0001) Substrates via Organometallic Vapor Phase EpitaxyMRS Proceedings, 1995
- GaN grown on hydrogen plasma cleaned 6H-SiC substratesApplied Physics Letters, 1993
- Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiCJournal of Applied Physics, 1988