Violet and Near-UV Light Emission from GaN/Al 0.08Ga 0.92N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy
- 1 August 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (8R) , 4085-4086
- https://doi.org/10.1143/jjap.34.4085
Abstract
GaN/Al0.08Ga0.92N double-heterostructure (DH) was grown on (0001)-oriented 6H-SiC substrate by low-pressure metal-organic vapor phase epitaxy (LP MO-VPE). The main peak wavelength at room temperature from GaN/Al0.08Ga0.92N DH injection diode was 420 nm which originated in the band-to-impurity transition in GaN. A weak peak at 360 nm was also observed.Keywords
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