In-plane aligned Pr6O11 buffer layers by ion-beam assisted pulsed laser deposition on metal substrates

Biaxially aligned praseodymium oxide $({\mathrm{Pr}}_{\mathrm{6}}{\mathrm{O}}_{\mathrm{11}})$ thin films were prepared by ion-beam assisted laser deposition on mechanically polished metal alloy substrates. A low divergence rf plasma source was used as an assisting source. Deposited films showed (001) oriented film growth with a strong biaxial alignment in the film plane. The degree of in-plane orientation dependent on ion-to-atom ratio and ion bombardment angle was studied. Planar ion channeling along the {110} planes is used to explain the observed alignment features. At an ion-to-atom ratio of 0.17 and an ion incident angle of 60°, in-plane orientations of 16° full width at half-maximum were obtained. Due to the low lattice mismatch (0.3%) to ${\mathrm{YBa}}_{\mathrm{2}}{\mathrm{Cu}}_{\mathrm{3}}{\mathrm{O}}_x$ films, the material could be an alternative to the ${\mathrm{YSZ/CeO}}_{\mathrm{2}}$ buffer layer system currently used for high critical current carrying superconducting tapes.