Localized epitaxial growth of MoSi2 on silicon
- 1 March 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (5) , 1518-1524
- https://doi.org/10.1063/1.336458
Abstract
Epitaxial tetragonal and hexagonal MoSi2 (t‐MoSi2 and h‐MoSi2) were grown locally in (001), (111), and (011)Si. Five different epitaxial modes, referring to sets of definite orientation relationships between silicides and the substrate Si, were identified for t‐MoSi2, whereas three distinct modes were found for h‐MoSi2. Variants of epitaxy, required by the symmetry consideration, were also observed. It is conceived that ample thermal energy was supplied during high‐temperature annealings to cause various modes of epitaxy which presumably correspond to low‐energy states that occur. The reactive nature of the silicide formation is suggested to facilitate the growth of epitaxial silicides on silicon.This publication has 14 references indexed in Scilit:
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