Thermal stability of PtSi contact to GexSi1−x
- 4 March 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (9) , 905-907
- https://doi.org/10.1063/1.104472
Abstract
Thermal stability of PtSi contact to epitaxial Ge0.5Si0.5/(100)Si has been investigated. The PtSi layer remained structurally and morphologically intact on the epitaxial Ge‐Si alloy at temperatures around 650 °C. When annealed at higher temperatures, PtSi penetrated locally into the alloy, although no chemical reaction was observed. The observed stability of PtSi is explained on the basis of a ternary Pt‐Ge‐Si equilibrium phase diagram. Other choices of contact compounds on Ge‐Si alloys are also discussed.Keywords
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