Theory of a novel voltage-sustaining layer for power devices
- 1 December 1998
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 29 (12) , 1005-1011
- https://doi.org/10.1016/s0026-2692(98)00065-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Power M.O.S. devicesMicroelectronics Reliability, 1984
- Optimum doping profile of power MOSFET epitaxial layerIEEE Transactions on Electron Devices, 1982
- Calculation of avalanche breakdown voltages of silicon p-n junctionsSolid-State Electronics, 1967