An improved silicon p-channel MESFET with a BF2 implanted thin channel and ErSi2 gate
- 30 November 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (11) , 993-996
- https://doi.org/10.1016/0038-1101(89)90161-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Subthreshold behavior of uniformly and nonuniformly doped long-channel MOSFETIEEE Transactions on Electron Devices, 1979
- A modified forward I-V plot for Schottky diodes with high series resistanceJournal of Applied Physics, 1979
- Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2-implanted siliconJournal of Applied Physics, 1979