Concise Analytical Model for Deep Submicron N-Channel Metal-Oxide-Semiconductor Devices with Consideration of Energy Transport

This publication has 8 references indexed in Scilit:

• An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects
  IEEE Electron Device Letters, 1992
• Analytical device model for submicrometer MOSFET's
  IEEE Transactions on Electron Devices, 1991
• Enhanced transconductance in deep submicrometer MOSFET
  IEEE Electron Device Letters, 1989
• High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level
  IEEE Electron Device Letters, 1988
• Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's
  IEEE Electron Device Letters, 1987
• MINIMOS 3: A MOSFET simulator that includes energy balance
  IEEE Transactions on Electron Devices, 1987
• A simple two-dimensional model for IGFET operation in the saturation region
  IEEE Transactions on Electron Devices, 1977
• Diffusion of Hot and Cold Electrons in Semiconductor Barriers
  Physical Review B, 1962