Ejection Patterns in Low-Energy Sputtering of GaAs and GaP Crystals
- 1 November 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (12) , 5736-5739
- https://doi.org/10.1063/1.1656042
Abstract
The angular distribution of particles sputtered from single crystals of GaAs and GaP has been studied. The (110), (111), and (1̄1̄1̄) faces of the crystals were bombarded normally with Ar ions with energies ranging from 100 to 600 eV. Crystal temperatures were varied between 50° and 525°C. From the (110) face a strong normal 〈110〉 spot appeared. From the (111) face, three strong 〈110〉 spots appeared, accompanied by less intense and less well defined 〈114〉 spots. From the (1̄1̄1̄) face no preferential ejection was noted. The clarity of the spots improved with increasing target temperature.This publication has 15 references indexed in Scilit:
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