Radiation induced shift study in parasitic MOS structures by 2D numerical simulation
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Evidence of negative charge trapping in high temperature annealed thermal oxideIEEE Transactions on Nuclear Science, 1994
- A two-dimensional numerical simulation of oxide charge buildup in MOS transistors due to radiationIEEE Transactions on Electron Devices, 1994
- A numerical simulation of hole and electron trapping due to radiation in silicon dioxideJournal of Applied Physics, 1991
- Charge Yield and Dose Effects in MOS Capacitors at 80 KIEEE Transactions on Nuclear Science, 1976