Modeling MESFET's for inter-modulation analysis in RF switches
- 1 November 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 4 (11) , 376-378
- https://doi.org/10.1109/75.329711
Abstract
This paper describes a new model for a resistive GaAs MESFET and its application to calculations of intermodulation distortion in switches. The model uses an expression for the I/V characteristics of the device whose parameters are fit to the static I/V and its derivatives. This new model provides a reliable means of describing the nonlinear distortion generated by a MESFET switch.Keywords
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