Nonlinear model for predicting intermodulation distortion in GaAs FET RF switch devices
- 31 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- A production ready, 6-18 GHz five-bit phase shifter with integrated CMOS compatible digital interface circuitryPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
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- A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1985
- GaAs FET RF switchesIEEE Transactions on Electron Devices, 1985
- Computer Calculation of Large-Signal GaAs FET Amplifier CharacteristicsIEEE Transactions on Microwave Theory and Techniques, 1985