Selective growth of polycrystalline diamond thin films on a variety of substrates using selective damaging by ultrasonic agitation
- 1 May 1992
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 7 (5) , 1144-1151
- https://doi.org/10.1557/jmr.1992.1144
Abstract
Polycrystalline diamond thin films have been selectively grown on silicon, silicon dioxide, silicon nitride, tantalum, molybdenum, alumina, and sapphire substrates using selective damaging by ultrasonic agitation. Processes were developed to selectively damage the substrates by ultrasonic agitation in methanol containing diamond particles of typical size 90 μm. Optical and scanning electron microscopy is used to study selectivity and morphology of as-grown diamond thin films.Keywords
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