Effect of Microstructure on the Electromigration Life of Thin-Film A1–Cu Conductors
- 1 April 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (4) , 1487-1493
- https://doi.org/10.1063/1.1661346
Abstract
The role of microstructural variables on the electromigration life of A1–Cu conductors is investigated. Experiments show that the lifetime of A1–Cu films is very sensitive to grainsize distribution and is independent of the amount of precipitate phase in the film. These results are explained in terms of a vacancy flux divergence model.This publication has 6 references indexed in Scilit:
- STUDY OF FAILURE MECHANISMS IN Al–Cu THIN FILMS BY HIGH-VOLTAGE ELECTRON MICROSCOPYApplied Physics Letters, 1971
- The effect of copper additions on electromigration in aluminum thin filmsMetallurgical Transactions, 1971
- Electromigration Damage in Aluminum Film ConductorsJournal of Applied Physics, 1970
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- Electromigration in Thin Al FilmsJournal of Applied Physics, 1969
- Grain-Boundary Diffusion of Gold in CopperJournal of Applied Physics, 1962