A silicon molecular beam epitaxy system dedicated to device-oriented material research
- 22 December 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 157 (1-4) , 285-294
- https://doi.org/10.1016/0022-0248(95)00326-6
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Fabrication and characterisation of Si-Si 0.7 Ge 0.3 quantum dot lightemitting diodesElectronics Letters, 1995
- UHVCVD growth of Si/SiGe heterostructures and their applicationsSemiconductor Science and Technology, 1994
- Growth of 100 GHz SiGe-Heterobipolar Transistor (HBT) StructuresJapanese Journal of Applied Physics, 1994
- 16Gbit/s multiplexer IC using double mesa Si/SiGe heterojunction bipolar transistorsElectronics Letters, 1993
- High-mobility GeSi PMOS on SIMOXIEEE Electron Device Letters, 1993
- N-channel Si/SiGe MODFETs: effects of rapid thermal activation on the DC performanceIEEE Electron Device Letters, 1993
- Normal incidence infrared detector using intervalence-subband transitions in Si1−xGex/Si quantum wellsApplied Physics Letters, 1992
- SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxyIEEE Transactions on Electron Devices, 1991
- Nonequilibrium boron doping effects in low-temperature epitaxial silicon filmsApplied Physics Letters, 1987
- Limited reaction processing: Silicon epitaxyApplied Physics Letters, 1985