Iron contamination in ion implanted silicon, as revealed by x-ray and electron diffraction
- 1 March 1986
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 39 (3) , 191-195
- https://doi.org/10.1007/bf00620734
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Double-crystal X-ray diffraction analysis of low-temperature ion implanted siliconSolid-State Electronics, 1985
- Effect of diffuse scattering in the strain profile determination by double crystal X-ray diffractionPhysica Status Solidi (a), 1985
- A Neutron Activation Analysis Study of the Sources of Transition Group Metal Contamination in the Silicon Device Manufacturing ProcessJournal of the Electrochemical Society, 1981
- Anomalous Residual Defects in Silicon after Annealing of Through-Oxide Phosphorus Implanted SamplesJapanese Journal of Applied Physics, 1977