Extremely long capacitance transients in 6H-SiC metal-oxide-semiconductor capacitors
- 1 July 1995
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (1) , 572-574
- https://doi.org/10.1063/1.360643
Abstract
We have measured capacitance‐time (C‐t) transients on n‐type 6H‐SiC MOS capacitors to obtain information on the generation lifetime near the SiO2/SiC interface. At temperatures between 260 and 370 °C, the capacitance recovery transient is thermally activated with an activation energy of about 2.0 eV. Because of the wide band gap of SiC, these transients are extremely long. As a figure of merit, extrapolation of the high‐temperature C‐t data indicates a room‐temperature recovery time of over 1010 yr.This publication has 14 references indexed in Scilit:
- Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiCIEEE Transactions on Electron Devices, 1994
- A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applicationsIEEE Electron Device Letters, 1994
- High temperature silicon carbide MOSFETs with verylow drain leakage currentElectronics Letters, 1994
- Low-frequency, high-temperature conductance and capacitance measurements on metal-oxide-silicon carbide capacitorsJournal of Applied Physics, 1994
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993
- Effects of oxidation conditions on electrical properties of SiC-SiO2 interfacesJournal of Applied Physics, 1990
- Power semiconductor device figure of merit for high-frequency applicationsIEEE Electron Device Letters, 1989
- Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin filmsJournal of Applied Physics, 1988
- Behavior of inversion layers in 3C silicon carbideApplied Physics Letters, 1986
- Wet and Dry Oxidation of Single Crystal β-SiC: Kinetics and Interface CharacteristicsMRS Proceedings, 1985