Graduated heterojunction in GaAs/AlAs quantum wells
- 6 June 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (23) , 3154-3156
- https://doi.org/10.1063/1.111323
Abstract
Molecular-beam epitaxy grown decoupled nominally square GaAs/AlAs multiquantum wells, producing levels deep in the well, have been studied by x-ray diffraction, photoluminescence excitation, and emission. The well width and period fluctuation (AlAs/GaAs/AlAs interface roughness) of the multiquantum wells were obtained by x-ray diffraction investigations. Using a smoothed profile of the interface as suggested by D. F. Nelson, R. C. Miller, C. W. Tu, and S. K. Sputz, Phys. Rev. B 36, 8063 (1987), the earlier verified theoretical approach [see Oelgart et al. Phys. Rev. B 49 (March 1994)] excellently predicts the experimentally observed transition energies.Keywords
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