Peltier cooling at a In-InP interface
- 1 October 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (10) , 4627-4628
- https://doi.org/10.1063/1.322389
Abstract
The cooling due to the Peltier effect was measured by passing electrical current across the liquid‐solid interface in a vertical liquid‐phase epitaxy system. Application of a steady‐state heat‐transfer analysis yielded values for the Peltier coefficient of InP (ND −NA?3×1016 cm−3) between 0.21 and 0.50 V in the 300–600 °C temperature range. The cooling temperatures observed could be effectively used for the growth of InP epitaxial layers.This publication has 4 references indexed in Scilit:
- Electric current controlled growth and doping modulation in GaAs liquid phase epitaxyJournal of Crystal Growth, 1975
- Measurements of Peltier cooling at a Ga-GaAs interface using a liquid-phase epitaxy systemJournal of Applied Physics, 1975
- Thermal Conductivity and Seebeck Coefficient of InPPhysical Review B, 1964
- Theory of the Thermoelectric Power of SemiconductorsPhysical Review B, 1954