High-power punch-through avalanche-diode microwave oscillators
- 1 September 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 3 (3) , 213-217
- https://doi.org/10.1109/JSSC.1968.1049885
Abstract
Two distinctive modes of oscillation are observed in specially profiled silicon avalanche diodes: transit-time mode at 3 to 7 GHz at lower bias current densities and an anomalous mode at around 1 GHz above certain threshold current levels. High pulsed power has been produced from both modes of operation. Space-charge-induced negative resistances are computed and their dependence on device parameters are discussed. Experimentally observed correlations between these two modes, including a locking behavior of the anomalous mode by the transit-time mode, and the computed and observed slight negative resistance at the anomalous-mode threshold suggest that the transit- time-mode oscillation and the space-charge-induced negative resistance are two possible pre-requisites for the initiation of the anomalous mode of oscillation.Keywords
This publication has 8 references indexed in Scilit:
- GaAs avalanche microwave oscillator with 1-watt power outputProceedings of the IEEE, 1967
- High-power, high-efficiency silicon avalanche diodes at ultra high frequenciesProceedings of the IEEE, 1967
- Avalanche characteristics and failure mechanism of high voltage diodesIEEE Transactions on Electron Devices, 1966
- High-frequency oscillations of p++-n+-n-n++avalanche diodes below the transit-time cutoffIEEE Transactions on Electron Devices, 1966
- Negative resistance in p-n junctions under avalanche breakdown conditions, part IIEEE Transactions on Electron Devices, 1966
- A Silicon Diode Microwave OscillatorBell System Technical Journal, 1965
- Specific Negative Resistance in SolidsProceedings of the Physical Society, 1963
- A Proposed High-Frequency, Negative-Resistance DiodeBell System Technical Journal, 1958