Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy
- 1 June 1993
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (11) , 7427-7430
- https://doi.org/10.1063/1.353984
Abstract
Deep level transient spectroscopy (DLTS) was performed on p‐isotype Si/SiGe/Si Schottky barrier diodes in order to obtain the valence band offset between Si and SiGe. A single strained Si0.7Ge0.3 layer was placed in such a depth in Si so as to be able to fill and empty the quantized SiGe well during the transient capacitance procedure. Broad capacitance transient peaks were obtained and interpreted as being due to the capture of holes by the quantum well. The broadness of the peaks was explained by thickness variations of the SiGe layer. From the dependence of the high temperature side of the DLTS peak on the rate window a valence band offset of 220±20 meV was evaluated.This publication has 9 references indexed in Scilit:
- Optical and structural investigation of SiGe/Si quantum wellsApplied Physics Letters, 1992
- Energy-band structure for strainedp-typePhysical Review B, 1991
- Accurate determination of the conduction-band offset of a single quantum well using deep level transient spectroscopyApplied Physics Letters, 1991
- Observation of electron emission from the isotype heterointerface by DLTSSolid State Communications, 1990
- Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxyIEEE Electron Device Letters, 1988
- Carrier dynamics in quantum wells behaving as giant trapsJournal of Applied Physics, 1987
- Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−y substratesApplied Physics Letters, 1986
- Transient capacitance spectroscopy on large quantum well heterostructuresJournal of Applied Physics, 1983
- Measurement of isotype heterojunction barriers by C-V profilingApplied Physics Letters, 1980