A 1.5 μm GaInNAs(Sb) laser grown on GaAs by MBE

Publisher Website

25 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/mbe.2002.1037759

Abstract

No abstract available

Keywords

This publication has 7 references indexed in Scilit:

Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region
Electronics Letters, 2002
Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers
Electronics Letters, 2002
High-performance CW 1.26-μm GaInNAsSb-SQW ridge lasers
IEEE Journal of Selected Topics in Quantum Electronics, 2001
1200 nm GaAs-based vertical cavity lasers employingGaInNAs multiquantum well active regions
Electronics Letters, 2000
The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers
IEEE Journal of Selected Topics in Quantum Electronics, 1999
Room-temperature pulsed operationof 1.3 µm GaInNAs/GaAs laser diode
Electronics Letters, 1997
GaInNAs: a novel material for long-wavelength semiconductor lasers
IEEE Journal of Selected Topics in Quantum Electronics, 1997