Permanent Damage Introduced by Single Particles Incident on Silicon Devices
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4526-4532
- https://doi.org/10.1109/tns.1983.4333165
Abstract
Analytical and experimental studies of the effects of permanent damage introduced in silicon devices by single particles have been performed. Calculation of dark current increases produced by a single neutron or alpha particle incident on a device depletion region suggests that problems may be encountered in certain VLSI circuits, such as imaging arrays. Determinations of the energy and angular distributions of primary knock-on atoms in 14-MeV neutron-irradiated silicon are presented. These distributions are employed in a distributed cluster model in an attempt to account for measured resistance changes in irradiated pinch resistors.Keywords
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