Effect of SiO2 intermediate layer on Al2O3/SiO2/n+-poly Si interface deposited using atomic layer deposition (ALD) for deep submicron device applications
- 1 September 2000
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 131 (1-3) , 79-83
- https://doi.org/10.1016/s0257-8972(00)00763-5
Abstract
No abstract availableKeywords
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