Dynamic properties of 1.3 µm semi-insulating-BHlight-emission-and-detection(LEAD)-diode module forsubscriber TCM transmission systems
- 2 February 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (3) , 189-191
- https://doi.org/10.1049/el:19950141
Abstract
The dynamic properties of a 1.3 µm light-emission-and-detection (LEAD)-diode module that has a high mesa semi-insulating buried heterostructure (SI-BH) to reduce the capacitance of the chip (0.6–0.8 pF) are described. A modulation bandwidth of 12 GHz in laser diode (LD) operation, and detection bandwidth of ~1.9 GHz in photodetector (PD) operation are achieved using a chip and a module, respectively. In bit error rate (BER) performance at 30 Mbit/s, a receiver sensitivity (BER = 10-8) of –37.4 dBm is confirmed, and a switching time of under 1 µs from LD to PD operation is estimated using a circuit simulator.Keywords
This publication has 7 references indexed in Scilit:
- 1.3 µm light-emission-and-detection (LEAD)diodeswith semi-insulating buried heterostructureElectronics Letters, 1994
- Highly reliable 1.55 µm GaInAsP laser diodes buried with semi-insulating iron-doped InPElectronics Letters, 1994
- Polarisation insensitivephotodetector characteristicsof a tensile strained barrier laser diodeElectronics Letters, 1994
- High responsivity 1.3 μm transceiver module for low cost optical half-duplex transmissionElectronics Letters, 1993
- Properties of commercial 1.3- mu m Fabry-Perot laser modules in a time compression multiplexing systemJournal of Lightwave Technology, 1991
- Photodetection properties of semiconductor laser diode detectorsJournal of Lightwave Technology, 1986
- 7.5 km bidirectional single-mode optical-fibre link using dual-mode InGaAsP/InP 1.3 μm laser detectorsElectronics Letters, 1985