A new degradation scheme for direct-tunneling ultrathin gate dielectric

This publication has 2 references indexed in Scilit:

• An Advanced 2.5nm Oxidized Nitride Gate Dielectric For Highly Reliable 0.25/spl mu/m MOSFETs
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1997
• 1.5 nm direct-tunneling gate oxide Si MOSFET's
  IEEE Transactions on Electron Devices, 1996