Evidence for interfacial space-charge regions in electron-beam-evaporated SiO

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Abstract
We report here I‐V and capacitance data and SEM observations made on thin‐film SiO metal‐insulator‐metal structures. Devices were fabricated using electron‐beam‐evaporated SiO and several different metals for the electrodes. I‐V observations alone could be interpreted as bulk‐limited conduction; however, the dispersion of the capacitance in frequency is bias dependent and suggests interfacial space‐charge regions. SEM observations support this interpretation and show these regions growing and shrinking with bias, demonstrating that the interfacial regions are not of negligible resistance.