ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy
- 23 September 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (13) , 2665-2667
- https://doi.org/10.1063/1.1615293
Abstract
We report molecular-beam epitaxy growth of single crystalline ZnSe nanowires with uniform diameters (∼10 nm) on GaP(111) substrates. The growth process was based on the Au-catalyzed vapor-liquid-solid deposition. As determined by electron microdiffraction and high-resolution transmission electron microscopy, ZnSe nanowires grew generally along the 〈110〉 and 〈112〉 directions with the orientation relationship of and The dominant defects were found to be twins at the interface between the substrate and the nanowires along the (111) plane.
Keywords
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