Some Applications of Ion Beams in III-V Compound Semiconductor Device Fabrication
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Ion-beam-assisted etching of GaAs/AlGaAs and InP/GaInAsP, ion-beam disordering of GaAs/AlGaAs multiple-quantum-well structures, and ion implantation in InP are discussed.Keywords
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