Minority-carrier diffusion lengths in GaP/GaAsxP1−x strained-layer superlattices
- 15 May 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (10) , 983-985
- https://doi.org/10.1063/1.94620
Abstract
We have made the first measurements of the minority‐carrier diffusion lengths L∥ and L⊥ respectively in both n‐ and p‐ type GaP/GaAsxP1−x 〈100〉 strained‐layer superlattices (SLS’s) in directions parallel and perpendicular to the interfaces. Using room‐temperature optical techniques, we find that L⊥≊0.1 μm, which is more than an order of magnitude smaller than L∥≊1.5 μm. The latter is comparable to that measured in the bulk materials which comprise the SLS layers, while the former demonstrates the existence of large potential barriers in both the conduction and valence bands.Keywords
This publication has 8 references indexed in Scilit:
- Electron mobilities in In0.2Ga0.8As/GaAs strained-layer superlatticesApplied Physics Letters, 1983
- Independently variable band gaps and lattice constants in GaAsP strained-layer superlatticesApplied Physics Letters, 1983
- The preparation and characterization of strained-layer superlattices in the GaAs + GaP SystemJournal of Electronic Materials, 1983
- Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriersPhysical Review B, 1983
- Minority carrier lifetime in GaP grown by liquid phase epitaxy for high temperature applicationsJournal of Applied Physics, 1982
- Almost perfect epitaxial multilayersJournal of Vacuum Science and Technology, 1977
- A method to determine bulk lifetime and diffusion coefficient of minority carriers; application to n-type LPE GaPApplied Physics Letters, 1977
- A Photon Counting Apparatus for Kinetic and Spectral MeasurementsReview of Scientific Instruments, 1972