An integrated thermopile structure with high responsivity using any standard CMOS process
- 1 April 1998
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 66 (1-3) , 218-224
- https://doi.org/10.1016/s0924-4247(98)00038-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Test structures to measure the Seebeck coefficient of CMOS IC polysiliconIEEE Transactions on Semiconductor Manufacturing, 1997
- A thermoelectric infrared radiation sensor with monolithically integrated amplifier stage and temperature sensorSensors and Actuators A: Physical, 1996
- Boron etch-stop in TMAH solutionsSensors and Actuators A: Physical, 1996
- pH-controlled TMAH etchants for silicon micromachiningSensors and Actuators A: Physical, 1996
- Thin-film boron-doped polycrystalline silicon70%-germanium30% for thermopilesSensors and Actuators A: Physical, 1996
- Electrochemical etch-stop characteristics of TMAH:IPA solutionsSensors and Actuators A: Physical, 1995
- An Etch-stop Utilizing Selective Etching Of N-type Silicon By Pulsed Potential AnodizationJournal of Microelectromechanical Systems, 1992
- A new approach for the fabrication of micromechanical structuresSensors and Actuators, 1989
- Study of electrochemical etch-stop for high-precision thickness control of silicon membranesIEEE Transactions on Electron Devices, 1989
- The Controlled Etching of Silicon in Catalyzed Ethylenediamine‐Pyrocatechol‐Water SolutionsJournal of the Electrochemical Society, 1979