Internally detected electron photoexcitation spectroscopy on heterostructures
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 56-58, 733-737
- https://doi.org/10.1016/0169-4332(92)90329-v
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Role of virtual gap states and defects in metal-semiconductor contactsPhysical Review Letters, 1987
- Tight-binding theory of heterojunction band lineups and interface dipolesJournal of Vacuum Science & Technology B, 1986
- Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriersPhysical Review B, 1983
- The electronic structure of Ge:GaAs(110) interfacesJournal of Vacuum Science and Technology, 1982
- Schottky barriers: An effective work function modelApplied Physics Letters, 1981
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- Transition in Schottky Barrier Formation with Chemical ReactivityPhysical Review Letters, 1978
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931