Material-selective etching of InP and an InGaAsP alloy
- 1 October 1982
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 17 (10) , 2911-2918
- https://doi.org/10.1007/bf00644669
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Chemical Etching Characteristics of ( 001 ) InPJournal of the Electrochemical Society, 1981
- Fast response InP/InGaAsP heterojunction phototransistorsElectronics Letters, 1981
- Etch features in Czochralski-grown single crystal indium phosphideJournal of Materials Science, 1980
- Etching Characteristics of Defects in the InGaAsP ‐ InP LPE LayersJournal of the Electrochemical Society, 1980
- Chemical Etching of InP and GaInAsP for Fabricating Laser Diodes and Integrated Optical CircuitsJapanese Journal of Applied Physics, 1980
- Chemical Etching of InP by H 2 O 2 ‐ H 2 SO 4 ‐ H 2 O SolutionJournal of the Electrochemical Society, 1979
- Etching and X‐Ray Diffraction Studies of the 111‐A and 111‐B Faces of Ga x In1 − x P y As1 − y CrystalsJournal of the Electrochemical Society, 1979
- Material‐Selective Chemical Etching in the System InGaAsP / InPJournal of the Electrochemical Society, 1979
- Révélation métallographique des défauts cristallins dans InPJournal of Crystal Growth, 1975
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965