W-band 65-nm CMOS and SiGe BiCMOS transmitter and receiver with lumped I-Q phase shifters

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Abstract
This paper describes 80-94 GHz and 70-77 GHz I-Q phase shifters and the corresponding transmitter and receiver ICs, fabricated in 65-nm CMOS and SiGe BiCMOS technologies, respectively. Lumped inductors and transformers are employed to realize small-form factor 90deg hybrids as needed in high density phased arrays. The CMOS transmitter operates with a saturated output power of +3 dBm and exhibits maximum absolute phase and amplitude errors of 14deg and 5.5 dB, respectively, when the phase is varied from 0deg to 360deg in steps of 22.5deg. The absolute phase error in the SiGe BiCMOS receiver is less than 8deg, with a maximum gain imbalance below 3 dB over its 3-dB bandwidth of 70-77 GHz. The peak gain and power consumption are 3.8 dB and 142 mW from 1.2 V supply for the CMOS transmitter, and 17 dB and 128 mW from 1.5 V and 2.5 V supplies for the SiGe BiCMOS receiver.

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