30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits
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- 17 January 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 53 (1) , 123-133
- https://doi.org/10.1109/tmtt.2004.839329
Abstract
Silicon planar and three-dimensional inductors and transformers were designed and characterized on-wafer up to 100 GHz. Self-resonance frequencies (SRFs) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitable for applications such as 60-GHz wireless local area network and 77-GHz automotive RADAR. Minimizing area over substrate is critical to achieving high SRF. A stacked transformer is reported with S/sub 21/ of -2.5 dB at 50 GHz, and which offers improved performance and less area (30 /spl mu/m/spl times/30 /spl mu/m) than planar transformers or microstrip couplers. A compact inductor model is described, along with a methodology for extracting model parameters from simulated or measured y-parameters. Millimeter-wave SiGe BiCMOS mixer and voltage-controlled-oscillator circuits employing spiral inductors are presented with better or comparable performance to previously reported transmission-line-based circuits.Keywords
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