Planar channeling dips in backscattering yield
- 1 April 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 67 (1-4) , 236-240
- https://doi.org/10.1016/0168-583x(92)95809-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Lattice site location of clustered boron atoms in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Planar dechannelingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Interaction of deuterium with defects in silicon studied by means of channelingPhysical Review B, 1988
- Lattice Location of Deuterium Interacting with the Boron Acceptor in SiliconPhysical Review Letters, 1988
- Multiple scattering of channeling ions in crystals-II. Planar channelingRadiation Effects, 1973
- Calculations on axial dechannelingRadiation Effects, 1972
- Relativistic Hartree–Fock X-ray and electron scattering factorsActa Crystallographica Section A, 1968