Photoacoustic spectroscopy of semiconductor heterostructures by piezoelectric transducers
- 15 March 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (6) , 1520-1524
- https://doi.org/10.1063/1.333410
Abstract
Photoacoustic spectroscopy was applied to characterize a semiconductor heterostructure layer on a substrate. Some III-V semiconductor samples were measured, including GaAs-AlAs superstructures. Observation of the indirect-transition edge on the higher-energy side above the direct-transition edge is reported, and the mechanism discussed.This publication has 8 references indexed in Scilit:
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