Atomistic Model of Transient Enhanced Diffusion and Clustering of Boron In Silicon

This publication has 11 references indexed in Scilit:

• B diffusion and clustering in ion implanted Si: The role of B cluster precursors
  Applied Physics Letters, 1997
• Ab initiopseudopotential calculations of B diffusion and pairing in Si
  Physical Review B, 1996
• Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
  Applied Physics Letters, 1996
• Trap-limited interstitial diffusion and enhanced boron clustering in silicon
  Applied Physics Letters, 1995
• Mechanisms of implant damage annealing and transient enhanced diffusion in Si
  Applied Physics Letters, 1994
• Implantation and transient B diffusion in Si: The source of the interstitials
  Applied Physics Letters, 1994
• Doping and damage dose dependence of implant induced transient enhanced diffusion below the amorphization threshold
  Applied Physics Letters, 1994
• Point defects and dopant diffusion in silicon
  Reviews of Modern Physics, 1989
• Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
  Applied Physics Letters, 1987
• Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation
  Physical Review B, 1974